| PART |
Description |
Maker |
| 2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
| HCF4001BEY HCF4001BM1 HCF4001M013TR HCF4001B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:3V; Transistor Polarity:Dual P Channel; Power Dissipation:150W; C-E Breakdown Voltage:200V; DC Current Gain Min (hfe):35; Collector Current:15A; DC Current Gain Max (hfe):160
QUAD 2-INPUT NOR GATE
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| SMBTA1407 |
NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage
|
http://
|
| FCX591 |
Power Collector dissipation: PC=1W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
| FZT591 |
Power Collector dissipation: PC=2W, Continuous Collector Current: IC=-1A
|
TY Semiconductor Co., Ltd
|
| 93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM
2K 5.0V Automotive Temperature Microwire Serial EEPROM
Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V
IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| MC68HCL05C8 MC68HSC05C8 68HC705C8 MC68HC05C8 MC68H |
TRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,25A I(C),TO-264AA
IGBT; Continuous Collector Current, Ic:60A; Collector Emitter Saturation Voltage, Vce(sat):24V; Power Dissipation, Pd:200W; Collector Emitter Voltage, Vceo:900V; Transistor Polarity:N Channel
PROGRAMMING REFRERENCE GUIDE 编程REFRERENCE指南
|
Motorola, Inc.
Motorola Inc
Motorola Mobility Holdings, Inc.
|
| 74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature
Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V
HCMOS family characteristics
|
Philips Semiconductors
NXP Semiconductors
|
| BC636 BC640 BC638 Q68000-A3367 Q68000-A3366 Q68000 |
PNP Silicon AF Transistors (High current gain High collector current) 自动对焦进步党硅晶体管（高电流增益高集电极电流）
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BDP948 BDP950 Q62702-D1338 Q62702-D1336 |
From old datasheet system
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| BDP954 Q62702-D1340 BDP952 BDP956 Q62702-D1344 Q62 |
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
